C&H Technology VS-GB90SA120U - Manual (Page 5)

VS-GB90SA120U
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Vishay Semiconductors
Revision:02-Aug-12 4 Document Number: 94725
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Fig. 7 - Typical IGBT Energy Losses vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5 , V
GE
= 15 V, Diode used HFA16PB120
Fig. 8 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5 , V
GE
= 15 V, Diode used HFA16PB120
Fig. 9 - Typical IGBT Energy Loss vs. R
g,
T
J
= 125 °C, I
C
= 75 A, L = 500 μH,
V
CC
= 600 V, V
GE
= 15 V, Diode used HFA16PB120
Fig. 10 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5 , V
GE
= 15 V
Fig. 11 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
I
C
- Collector Current (A)
S
witching Energy (mJ)
E
on
E
off
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
10 20 30 40 50 60 70 80 90 100
I
C
- Collector Current (A)
S
witching Time (μs)
0.1
1
0.01
0 20 40 60 80
t
r
t
f
t
d(on)
t
d(off)
R
g
( Ω)
Energy Losses (mJ)
4
6
8
10
12
14
0
2
4
0 10 20 30 40 50
E
on
E
off
Switching Time (µs)
R
G
( Ω)
0 20 30 10 40 50
10
10 000
1000
100
t
d(on)
t
d(off)
t
f
t
r
Rectangular Pulse Duration (s)
Z thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
0.01
0.1
1
0.001
0.0001 0.001 0.01 0.1 1 10
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.75
0.50
0.25
0.1
0.05
0.02
DC