Vishay semiconductors – C&H Technology VS-GB90SA120U User Manual

Page 7

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VS-GB90SA120U

www.vishay.com

Vishay Semiconductors

Revision:02-Aug-12

6

Document Number: 94725

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 14b - Switching Loss Waveforms Test Circuit

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

CIRCUIT

CIRCUIT

CONFIGURATION CODE

CIRCUIT DRAWING

Single switch, no
antiparallel diode

S

LINKS TO RELATED DOCUMENTS

Dimensions

www.vishay.com/doc?95423

Packaging information

www.vishay.com/doc?95425

t = 5 µs

t

d(on)

t

f

t

r

90 %

t

d(off)

10 %

90 %

10 %

5 %

V

C

I

C

E

on

E

off

E

ts

= (E

on

+ E

off

)

1

2

3

1

-

Insulated Gate Bipolar Transistor (IGBT)

-

Vishay Semiconductors product

2

-

B = IGBT Generation 5

3

-

Current rating (90 = 90 A)

4

-

Circuit configuration (S = Single switch without antiparallel diode)

5

-

Package indicator (A = SOT-227)

6

-

Voltage rating (120 = 1200 V)

8

7

-

Speed/type (U = Ultrafast IGBT)

Device code

5

1

3

2

4

6

7

8

G

VS-

B

90

S

A

120

U

3 (C)

2 (G)

1, 4 (E)

1

4

3

2

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