C&H Technology VS-GB90SA120U - Manual (Page 6)

VS-GB90SA120U
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Vishay Semiconductors
Revision:02-Aug-12 5 Document Number: 94725
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Fig. 12 - IGBT Reverse Bias SOA, TJ = 150 °C, V
GE
= 15 V
Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
I C
(A)
V
CE
(V)
10 100 1000 10 000
1
1000
10
100
* Driver same type as D.U.T.; V
C
= 80 % of V
ce(max.)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
50 V
1000 V
D.U.T. L
V
C
*
2
1
R
g
V
CC D.U.T.
R =
V
CC
I
CM
+
-
L
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
+ -
R
g
V
CC
+
-