C&H Technology CPV362M4FPbF - Manual (Page 2)

Document Number: 94361 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-Apr-08 1
IGBT SIP Module
(Fast IGBT)
CPV362M4FPbF
Vishay High Power Products
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED ® soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz)
See fig. 1 for current vs. frequency curve
• Totally lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
I
RMS
per phase (3.1 kW total)
with T
C
= 90 °C
11 A
T
J
125 °C
Supply voltage (DC) 360 V
Power factor 0.8
Modulation depth See fig. 1 115 %
IMS-2
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current, each IGBT I
C
T
C
= 25 °C 8.8
A
T
C
= 100 °C 4.8
Pulsed collector current I
CM
Repetitive rating; V
GE
= 20 V,
pulse width limited by maximum
junction temperature. See fig. 20 26
Clamped inductive load current I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 µH, R
G
= 50
Ω See fig. 19 800
Diode continuous forward current I
F
T
C
= 100 °C 3.4
Diode maximum forward current I
FM
26
Gate to emitter voltage V
GE
± 20 V
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
RMS
Maximum power dissipation, each IGBT P
D
T
C
= 25 °C 23
W
T
C
= 100 °C 9.1
Operating junction and
storage temperature range
T
J
, T
Stg
- 40 to + 150
°C
Soldering temperature For 10 s 300 (0.063" (1.6 mm) from case)
Mounting torque 6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf · in
(N · m)
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, each IGBT, one IGBT in conduction R
thJC
(IGBT) - 5.5
°C/W Junction to case, each diode, one diode in conduction R
thJC
(diode) - 9.0
Case to sink, flat, greased surface R
thCS
(module) 0.1 -
Weight of module 20 (0.7) - g (oz.)