C&H Technology CPV362M4FPbF - Manual (Page 5)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94361
4 Revision: 29-Apr-08
CPV362M4FPbF
Vishay High Power Products IGBT SIP Module
(Fast IGBT)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0
800
1000
600
400
200
C - Capacitance (pF)
V
CE
- Collector to Emitter Voltage (V)
10 100 1
V
GE
= 0 V, f = 1 MHz
C
ies
= C
ge
+ C
ce
shorted
C
res
= C
gc
C
oes
= C
ce
+ C
gc
C
ies
C
oes
C
res
0
12
16
4
8
20
V
GE
- Gate to Emitter Voltage (V)
Q
G
- Total Gate Charge (nC)
6 12 18 24 30 0
V
CC
= 400 V
I
C
= 4.8 A
0.42
0.43
0.44
0.45
0.46
Total Switching Losses (mJ)
R
G
- Gate Resistance ( Ω)
20 30 40 50 10
V
CC
= 480 V
V
GE
= 15 V
T
J
= 25 °C
I
C
= 4.8 A
0.1
1
10
Total Switching Losses (mJ)
T
J
- Junction Temperature (°C)
- 40 - 20 0 60 40 20 80 100 120 140 160 - 60
R
G
= 50 Ω
V
GE
= 15 V
V
CC
= 480 V
I
C
= 9.6 A
I
C
= 4.8 A
I
C
= 2.4 A