C&H Technology CPV362M4FPbF - Manual (Page 6)

Document Number: 94361 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-Apr-08 5
CPV362M4FPbF
IGBT SIP Module
(Fast IGBT)
Vishay High Power Products
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 14 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 15 - Typical Recovery Current vs. dI
F
/dt
Fig. 16 - Typical Stored Charge vs. dI
F
/dt
0.0
0.5
1.0
1.5
2.0
Total Switching Losses (mJ)
I
C
- Collector to Emitter Current (A)
2 4 6 8 10 0
R
G
= 50 Ω
T
J
= 150 °C
V
CC
= 480 V
V
GE
= 15 V
1
100
10
I C
- Collector to Emitter Current (A)
V
CE
- Collector to Emitter Voltage (V)
10 100 1000 1
Safe operating area
V
GE
= 20 V
T
J
= 125 °C
0.1
1
100
10
I F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop
0.4 2.0 2.4 1.6 1.2 0.8 2.8 3.2
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0
100
20
40
60
80
t rr
(ns)
dI
F
/dt (A/µs)
1000 100
I
F
= 8.0 A
I
F
= 4.0 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
1
100
10
I IRRM
- (A)
dI
F
/dt - (A/µs)
1000 100
I
F
= 16 A
I
F
= 8.0 A
I
F
= 4.0 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
0
100
200
300
400
500
Q
rr
- (nC)
dI
F
/dt - (A/µs)
1000 100
I
F
= 16 A
I
F
= 8.0 A
I
F
= 4.0 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C