C&H Technology VS-GT175DA120U - Manual (Page 4)

VS-GT175DA120U
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12 3 Document Number: 93990
For technical questions within your region: [email protected] , [email protected] , [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
of IGBT
Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature
Diode Leg
Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
J
, T
Stg
- 40 - 150 °C
Junction to case thermal resistance
IGBT
R
thJC
- - 0.115
°C/W Diode - - 0.57
Case to sink thermal resistance, flat, greased surface R
thCS
- 0.05 -
Mounting torque, on terminals and heatsink - - 1.3 Nm
Weight - 30 - g
Case style SOT-227
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0 40 80 120 200 160 240 280 320
0
160
100
120
140
20
40
60
80
DC
V
CE
- Collector-to-Emitter Voltage (V)
I C
-
Collector to Emitter Curr
ent (A)
0 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
300
100
200
275
75
175
250
50
150
225
25
125
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
V
GE
= 15 V
I
F
- Continuous Forward Current (A)
Allowable Case Temperature (°C)
80
100
120
140
160
0
20
40
60
0 10 20 30 40 50 60 70 80
V
F
- Forward Voltage Drop Characteristics (V)
I F
- Forwar
d
Curr
ent (A)
4.0 2.0 1.0 3.0 5.0 7.0 8.0 6.0 0
160
200
0
40
80
120
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C