Vishay semiconductors – C&H Technology VS-GT175DA120U User Manual
Page 6
VS-GT175DA120U
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
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Document Number: 93990
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Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 75 A, L = 500 μH, V
CC
= 600 V, V
GE
= 15 V
Diode used: HFA16PB120
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V, I
C
= 75 A, V
GE
= 15 V
Diode used: HFA16PB120
Fig. 13 - Typical Reverse Recovery Time vs. dI
F
/dt, of Diode,
at I
F
= 50 A, V
R
= 400 V
Fig. 14 - Typical Stored Charge vs. dI
F
/dt of Diode,
at I
F
= 50 A, V
R
= 400 V
Fig. 15 - Typical Reverse Recovery Current vs. dI
F
/dt, of Diode,
at I
F
= 50 A, V
R
= 400 V
R
g
(
Ω)
Energy Losses (mJ)
20
30
40
0
10
0 10 20 30 40 50
E
on
E
off
S
witching Time (μs)
R
g
(
Ω)
0.1
1
10
0.01
0 10 20 30 40 50 60
t
d(on)
t
d(off)
t
r
t
f
t
rr
(ns)
dI
F
/dt (A/μs)
100
1000
90
310
150
190
270
130
110
170
230
290
250
210
T
J
= 125 °C
T
J
= 25 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100
1000
0
3000
1000
1500
2500
2000
500
T
J
= 125 °C
T
J
= 25 °C
I
rr
(A)
dI
F
/dt (A/μs)
100
1000
0
45
25
35
40
20
30
10
15
5
T
J
= 25 °C
T
J
= 125 °C