Vishay semiconductors – C&H Technology VS-GT175DA120U User Manual
Page 5
VS-GT175DA120U
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Vishay Semiconductors
Revision: 02-Aug-12
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Document Number: 93990
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Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V, R
g
= 5
, V
GE
= 15 V
Diode used: HFA16PB120
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V, R
g
= 5
, V
GE
= 15 V
Diode used: HFA16PB120
V
GE
-
Gate-to-Emitter Voltage (V)
I
C
-
Collector to Emitter Curr
ent (A)
6.5
5.5
5.0
6.0
7.0
8.0
8.5 9.0
7.5
4.5
80
100
140
120
0
20
40
60
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
V
CES
-
Collector-to-Emitter Voltage (V)
I
CE
S
-
Collector Curr
ent (A)
0
1200
200
400
600
800
1000
0.0001
100
1
0.1
0.01
0.001
10
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
G
E(th)
Thr
eshol
d
V
o
ltage (V)
I
C
(mA)
3.5
4
4.5
5
5.5
6
2
2.5
3
0.20 0.40 0.60 0.80 1.00
T
J
= 25 °C
T
J
= 125 °C
T
J
-
Junction Temperature (°C)
V
CE
-
Collector
-to-Emitter Curr
e
nt (A)
20
0
160
40
80
120
60
100
140
0.8
1.2
1.6
2.2
2.4
1.0
1.4
1.8
2.0
I
C
= 100 A
I
C
= 80 A
I
C
= 60 A
I
C
= 40 A
I
C
-
Collector Current (A)
S
witching Energy (mJ)
4
6
8
10
12
0
2
10 20 30 40 50 60 70 80 90 100 110 120
E
on
E
off
I
C
-
Collector Current (A)
S
witching Time (μs)
0.1
1
0.01
0 20 40 60 80 100 120
t
d(on)
t
d(off)
t
r
t
f