Rainbow Electronics ATV750BL - Manual (Page 12)

12
ATV750B(L)
0301I–08/01
Erasure
Characteristics
The entire memory array of an ATV750B is erased after exposure to ultraviolet light at a wave-
length of 2537 Å. Complete erasure is assured after a minimum of 20 minutes exposure using
12,000 µW/cm
2 intensity lamps spaced one inch away from the chip. Minimum erase time for
lamps at other intensity ratings can be calculated from the minimum integrated erasure dose
of 15 W
•
sec/cm 2 . To prevent unintentional erasure, an opaque label is recommended to cover
the clear window on any UV-erasable PLD which will be subjected to continuous fluorescent
indoor lighting or sunlight.
Atmel CMOS
PLDs
The ATV750B utilizes an advanced 0.65-micron CMOS EPROM technology. This technol-
ogy’s state-of-art features are the optimum combination for PLDs:
• CMOS technology provides high-speed, low-power, and high noise immunity.
• EPROM technology is the most cos-effective method for producing PLDs – surpassing
bipolar fusible link technology in low cost, while providing the necessary
reprogrammability.
• EPROM reprogrammability, which is 100% tested before shipment, provides inherently
better programmability and reliability than one-time fusible PLDs.