Rainbow Electronics DS1250Y_AB User Manual
Rainbow Electronics Storage
E
Copyright 1995 by Dallas Semiconductor Corporation.
All Rights Reserved. For important information regarding
patents and other intellectual property rights, please refer to
Dallas Semiconductor data books.
DS1250Y/AB
4096K Nonvolatile SRAM
DS1250Y/AB
041497 1/11
FEATURES
•
10 years minimum data retention in the absence of
external power
•
Data is automatically protected during power loss
•
Replaces 512K x 8 volatile static RAM, EEPROM or
Flash memory
•
Unlimited write cycles
•
Low–power CMOS
•
Read and write access times as fast as 70 ns
•
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
•
Full
±
10% V
CC
operating range (DS1250Y)
•
Optional
±
5% V
CC
operating range (DS1250AB)
•
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
•
JEDEC standard 32–pin DIP package
•
New PowerCap Module (PCM) package
– Directly surface–mountable module
– Replaceable snap–on PowerCap provides lith-
ium backup battery
– Standardized pinout for all nonvolatile SRAM
products
– Detachment feature on PCM allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
32–PIN ENCAPSULATED PACKAGE
740 MIL EXTENDED
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE
CE
WE
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
34
33
32
31
30
29
28
27
26
25
24
23
22
14
15
16
17
21
20
19
18
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
NC
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
NC
NC
NC
GND
V
BAT
34–PIN POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
PIN DESCRIPTION
A0 – A14
– Address Inputs
DQ0 – DQ7
– Data In/Data Out
CE
– Chip Enable
WE
– Write Enable
OE
– Output Enable
V
CC
– Power (+5V)
GND
– Ground
NC
– No Charge