Rainbow Electronics IRFTS8342TRPBF - Manual (Page 2)

IRFTS8342PbF
2 www.irf.com
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width  400μs; duty cycle  2%.
ƒ When mounted on 1 ich square copper board.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
V
DSS
/ T
J
Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C
R
DS(on)
––– 15 19
––– 22 29
V
GS(th)
Gate Threshold Voltage 1.35 1.80 2.35 V V
DS
= V
GS
, I
D
= 25μA
V
GS(th)
Gate Threshold Voltage Coefficient ––– -5.7 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 12 ––– ––– S
Q
g
Total Gate Charge ––– 4.8 –––
Q
gs
Gate-to-Source Charge ––– 2.1 –––
Q
gd
Gate-to-Drain Charge ––– 1.6 –––
R
G
Gate Resistance ––– 2.6 ––– 
t
d(on)
Turn-On Delay Time ––– 7.3 –––
t
r
Rise Time ––– 15 –––
t
d(off)
Turn-Off Delay Time ––– 9.1 –––
t
f
Fall Time ––– 8.2 –––
C
iss
Input Capacitance ––– 560 –––
C
oss
Output Capacitance ––– 102 –––
C
rss
Reverse Transfer Capacitance ––– 48 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
Ù
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 8.2 12 ns
Q
rr
Reverse Recovery Charge ––– 4.5 5.4 nC
Thermal Resistance
Parameter Units
R
JA
Junction-to-Ambient e °C/W
Conditions
ƒ = 1.0MHz
V
GS
= 0V
V
DS
= 25V
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.2A d
V
GS
= 4.5V, I
D
= 6.6A d
m 
μA
T
J
= 25°C, I
F
= 6.6A, V
DD
= 24V
di/dt = 100/μs d
T
J
= 25°C, I
S
= 6.6A, V
GS
= 0V d
showing the
integral reverse
p-n junction diode.
MOSFET symbol
I
D
= 6.6A
R
G
= 6.8 
V
DS
= 10V, I
D
= 6.6A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DD
= 15V, V
GS
= 4.5V eÃ
I
D
= 6.6.A
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
V
GS
= 4.5V
ns
pF
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
2.5
80
nA
nC
Max.
62.5
Typ.
–––