Irfts8342pbf – Rainbow Electronics IRFTS8342TRPBF User Manual

Page 4

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IRFTS8342PbF

4

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 8. Maximum Safe Operating Area

Fig 9. Maximum Drain Current vs.

Ambient Temperature

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 10. Threshold Voltage vs. Temperature

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

I S

D

, R

ev

er

se

D

ra

in

C

ur

re

nt

(

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

25

50

75

100

125

150

TA , Ambient Temperature (°C)

0

2

4

6

8

10

I D

,

D

ra

in

C

ur

re

nt

(

A

)

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

V

G

S

(t

h)

, G

at

e

th

re

sh

ol

d

V

ol

ta

ge

(

V

)

ID = 25μA

ID = 250μA

ID = 1.0mA

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

100

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

100

T

he

rm

al

R

es

po

ns

e

(

Z

th

JA

)

°C

/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + TA

0.01

0.1

1

10

100

VDS, Drain-toSource Voltage (V)

0.01

0.1

1

10

100

1000

I D

,

D

ra

in

-t

o-

S

ou

rc

e

C

ur

re

nt

(

A

)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100μsec

DC

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