Rainbow Electronics IRFTS8342TRPBF - Manual (Page 5)

IRFTS8342PbF
www.irf.com 5
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 15. Typical Power vs. Time Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET ® Power MOSFETs
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple  5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+ -
-
-
ƒ
„
‚
R
G
V
DD dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T

0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
10
15
20
25
30
35
40
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m

)
ID = 8.2A
TJ = 25°C
TJ = 125°C
0 10 20 30 40 50 60 70 80
ID, Drain Current (A)
10
20
30
40
50
60
70
80
90
100
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m

)
Vgs = 10V
Vgs = 4.5V
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J) ID
TOP 0.96A
1.5A
BOTTOM 6.6A
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
0
200
400
600
800
1000
S
in
gl
e
P
ul
se
P
ow
er
(
W
)