Rainbow Electronics AT45DB041D User Manual

Megabit 2.5-volt or 2.7-volt dataflash, Features, Description

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Features

Single 2.5V or 2.7V to 3.6V Supply

RapidS

TM

Serial Interface: 66MHz Maximum Clock Frequency

– SPI Compatible Modes 0 and 3

User Configurable Page Size

– 256-Bytes per Page
– 264-Bytes per Page
– Page Size Can Be Factory Pre-configured for 256-Bytes

Page Program Operation

– Intelligent Programming Operation
– 2,048 Pages (256-/264-Bytes/Page) Main Memory

Flexible Erase Options

– Page Erase (256-Bytes)
– Block Erase (2-Kbytes)
– Sector Erase (64-Kbytes)
– Chip Erase (4Mbits)

Two SRAM Data Buffers (256-, 264-Bytes)

– Allows Receiving of Data while Reprogramming the Flash Array

Continuous Read Capability through Entire Array

– Ideal for Code Shadowing Applications

Low-power Dissipation

– 7mA Active Read Current Typical
– 25µA Standby Current Typical
– 15µA Deep Power-down Typical

Hardware and Software Data Protection Features

– Individual Sector

Sector Lockdown for Secure Code and Data Storage

– Individual Sector

Security: 128-byte Security Register

– 64-byte User Programmable Space
– Unique 64-byte Device Identifier

JEDEC Standard Manufacturer and Device ID Read

100,000 Program/Erase Cycles Per Page Minimum

Data Retention – 20 Years

Industrial Temperature Range

Green (Pb/Halide-free/RoHS Compliant) Packaging Options

1.

Description

The AT45DB041D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a
wide variety of digital voice-, image-, program code- and data-storage applications.
The AT45DB041D supports RapidS serial interface for applications requiring very
high speed operations. RapidS serial interface is SPI compatible for frequencies up to
66MHz. Its 4,325,376-bits of memory are organized as 2,048 pages of 256-bytes or
264-bytes each. In addition to the main memory, the AT45DB041D also contains two
SRAM buffers of 256-/264-bytes each. The buffers allow the receiving of data while a
page in the main Memory is being reprogrammed, as well as writing a continuous data
stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-con-
tained three step read-modify-write operation. Unlike conventional Flash memories
that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash uses a RapidS serial interface to sequentially access its data. The simple
sequential access dramatically

4-megabit
2.5-volt or
2.7-volt
DataFlash

®

AT45DB041D

3595R–DFLASH–11/2012

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