Rainbow Electronics AT45DB041D - Manual (Page 8)

8
3595R–DFLASH–11/2012
AT45DB041D
7.2 Buffer to Main Memory Page Program with Built-in Erase
Data written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte
opcode, 83H for buffer 1 or 86H for buffer 2, must be clocked into the device. For the DataFlash
standard page size (264-bytes), the opcode must be followed by three address bytes consist of
four don’t care bits, 11 page address bits (PA10 - PA0) that specify the page in the main memory
to be written and nine don’t care bits. To perform a buffer to main memory page program with
built-in erase for the binary page size (256-bytes), the opcode 83H for buffer 1 or 86H for buffer
2, must be clocked into the device followed by three address bytes consisting of five don’t care
bits 11 page address bits (A18 - A8) that specify the page in the main memory to be written and
eight don’t care bits. When a low-to-high transition occurs on the CS pin, the part will first erase
the selected page in main memory (the erased state is a logic 1) and then program the data
stored in the buffer into the specified page in main memory. Both the erase and the program-
ming of the page are internally self-timed and should take place in a maximum time of t
EP
.
During this time, the status register will indicate that the part is busy.
7.3 Buffer to Main Memory Page Program without Built-in Erase
A previously-erased page within main memory can be programmed with the contents of either
buffer 1 or buffer 2. A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into
the device. For the DataFlash standard page size (264-bytes), the opcode must be followed by
three address bytes consist of four don’t care bits, 11 page address bits (PA10 - PA0) that spec-
ify the page in the main memory to be written and nine don’t care bits. To perform a buffer to
main memory page program without built-in erase for the binary page size (256-bytes), the
opcode 88H for buffer 1 or 89H for buffer 2, must be clocked into the device followed by three
address bytes consisting of five don’t care bits, 11 page address bits (A18 - A8) that specify the
page in the main memory to be written and eight don’t care bits. When a low-to-high transition
occurs on the CS pin, the part will program the data stored in the buffer into the specified page in
the main memory. It is necessary that the page in main memory that is being programmed has
been previously erased using one of the erase commands (Page Erase or Block Erase). The
programming of the page is internally self-timed and should take place in a maximum time of t
P
.
During this time, the status register will indicate that the part is busy.
7.4 Page Erase
The Page Erase command can be used to individually erase any page in the main memory array
allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a
page erase in the DataFlash standard page size (264-bytes), an opcode of 81H must be loaded
into the device, followed by three address bytes comprised of four don’t care bits, 11 page
address bits (PA10 - PA0) that specify the page in the main memory to be erased and nine don’t
care bits. To perform a page erase in the binary page size (256-bytes), the opcode 81H must be
loaded into the device, followed by three address bytes consist of five don’t care bits, 11 page
address bits (A18 - A8) that specify the page in the main memory to be erased and eight don’t
care bits. When a low-to-high transition occurs on the CS pin, the part will erase the selected
page (the erased state is a logical 1). The erase operation is internally self-timed and should
take place in a maximum time of t
PE
. During this time, the status register will indicate that the
part is busy.