Rainbow Electronics AT25DF041A - Manual (Page 2)

2
3668E–DFLASH–11/2012
AT25DF041A
The physical sectoring and the erase block sizes of the AT25DF041A have been optimized to
meet the needs of today’s code and data storage applications. By optimizing the size of the
physical sectors and erase blocks, the memory space can be used much more efficiently.
Because certain code modules and data storage segments must reside by themselves in their
own protected sectors, the wasted and unused memory space that occurs with large sectored
and large block erase Flash memory devices can be greatly reduced. This increased memory
space efficiency allows additional code routines and data storage segments to be added while
still maintaining the same overall device density.
The AT25DF041A also offers a sophisticated method for protecting individual sectors against
erroneous or malicious program and erase operations. By providing the ability to individually pro-
tect and unprotect sectors, a system can unprotect a specific sector to modify its contents while
keeping the remaining sectors of the memory array securely protected. This is useful in applica-
tions where program code is patched or updated on a subroutine or module basis, or in
applications where data storage segments need to be modified without running the risk of errant
modifications to the program code segments. In addition to individual sector protection capabili-
ties, the AT25DF041A incorporates Global Protect and Global Unprotect features that allow the
entire memory array to be either protected or unprotected all at once. This reduces overhead
during the manufacturing process since sectors do not have to be unprotected one-by-one prior
to initial programming.
Specifically designed for use in 2.5-volt or 3-volt systems, the AT25DF041A supports read, pro-
gram, and erase operations with a supply voltage range of 2.3V to 3.6V or 2.7V to 3.6V. No
separate voltage is required for programming and erasing.