Data read mode, Data write mode, Data retention mode – Rainbow Electronics DS1554 User Manual

Page 4

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DS1554

4 of 20

DATA READ MODE

The DS1554 is in the read mode whenever

CE

(chip enable) is low and

WE

(write enable) is high. The

device architecture allows ripple-through access to any valid address location. Valid data will be available
at the DQ pins within t

AA

after the last address input is stable, providing that

CE

and

OE

access times are

satisfied. If

CE

or

OE

access times are not met, valid data will be available at the latter of chip enable

access (t

CEA

) or at output enable access time (t

OEA

). The state of the data input/output pins (DQ) is

controlled by

CE

and

OE

. If the outputs are activated before t

AA

, the data lines are driven to an

intermediate state until t

AA

. If the address inputs are changed while

CE

and

OE

remain valid, output data

will remain valid for output data hold time (t

OH

) but will then go indeterminate until the next address

access.

DATA WRITE MODE

The DS1554 is in the write mode whenever

WE

and

CE

are in their active state. The start of a write is

referenced to the latter occurring transition of

WE

or

CE

. The addresses must be held valid throughout

the cycle.

CE

and

WE

must return inactive for a minimum of t

WR

prior to the initiation of a subsequent

read or write cycle. Data in must be valid t

DS

prior to the end of the write and remain valid for t

DH

afterward. In a typical application, the

OE

signal will be high during a write cycle. However,

OE

can be

active provided that care is taken with the data bus to avoid bus contention. If

OE

is low prior to

WE

transitioning low, the data bus can become active with read data defined by the address inputs. A low
transition on

WE

will then disable the outputs t

WEZ

after

WE

goes active.

DATA RETENTION MODE

The 5-volt device is fully accessible and data can be written and read only when V

CC

is greater than V

PF

.

However, when V

CC

is below the power-fail point V

PF

(point at which write protection occurs) the

internal clock registers and SRAM are blocked from any access. When V

CC

falls below the battery switch

point V

SO

(battery supply level), device power is switched from the V

CC

pin to the internal backup lithium

battery. RTC operation and SRAM data are maintained from the battery until V

CC

is returned to nominal

levels.

The 3.3 volt device is fully accessible and data can be written and read only when V

CC

is greater than V

PF

.

When V

CC

falls below V

PF

, access to the device is inhibited. If V

PF

is less than V

SO

, the device power is

switched from V

CC

to the internal backup lithium battery when V

CC

drops below V

PF

. If V

PF

is greater

than V

SO

, the device power is switched from V

CC

to the internal backup lithium battery when V

CC

drops

below V

SO

. RTC operation and SRAM data are maintained from the battery until V

CC

is returned to

nominal levels.

All control, data, and address signals must be powered down when V

CC

is powered down.

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