12v austin superlynx, 16a: non-isolated dc-dc power modules, Data sheet – GE Industrial Solutions 12V Austin SuperLynx 16A User Manual

Page 3: Electrical specifications, Continued)

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GE

Data Sheet

12V Austin SuperLynx

TM

16A: Non-Isolated DC-DC Power Modules

10Vdc –14Vdc input; 0.75Vdc to 5.5Vdc output; 16A Output Current

May 7, 2013

©2013 General Electric Company. All rights reserved.

Page 3

Electrical Specifications

(continued)

Parameter

Device

Symbol

Min

Typ

Max

Unit

Output Voltage Set-point

All

V

O, set

-2.0 V

O, set

+2.0

%

V

O, set

(V

IN

=

IN, min

, I

O

=I

O, max

, T

A

=25°C)

Output Voltage

All

V

O, set

-2.5%

+3.5% %

V

O, set

(Over all operating input voltage, resistive load,
and temperature conditions until end of life)

Adjustment Range

All

V

O

0.7525 5.5

Vdc

Selected by an external resistor

Output

Regulation

Line (V

IN

=V

IN, min

to V

IN, max

) All

0.3

% V

O, set

Load (I

O

=I

O, min

to I

O, max

) All

0.4

% V

O, set

Temperature (T

ref

=T

A, min

to T

A, max

) All

0.4

% V

O, set

Output Ripple and Noise on nominal output

(V

IN

=V

IN, nom

and I

O

=I

O, min

to I

O, max

Cout = 1μF ceramic//10μFtantalum

capacitors)

RMS (5Hz to 20MHz bandwidth)

All

12 30

mV

rms

Peak-to-Peak (5Hz to 20MHz bandwidth)

All

30 75

mV

pk-pk

External Capacitance

ESR ≥ 1 mΩ All

C

O, max

1000

μF

ESR ≥ 10 mΩ All

C

O, max

5000

μF

Output Current

All

I

o

0 16

Adc

Output Current Limit Inception (Hiccup Mode )

All

I

O, lim

180

% I

o

(V

O

= 90% of V

O, set

)

Output Short-Circuit Current

All

I

O, s/c

3

Adc

(V

O

≤250mV) ( Hiccup Mode )

Efficiency V

O,set

= 0.75Vdc

η

79.0

%

V

IN

= V

IN, nom

, T

A

=25°C V

O, set

= 1.2Vdc

η

85.0

%

I

O

=I

O, max ,

V

O

= V

O,set

V

O,set

= 1.5Vdc

η

87.0

%

V

O,set

= 1.8Vdc

η

88.0

%

V

O,set

= 2.5Vdc

η

90.5

%

V

O,set

= 3.3Vdc

η

92.0

%

V

O,set

= 5.0Vdc

η

94.0

%

Switching Frequency

All

f

sw

300

kHz

Dynamic Load Response

(dIo/dt=2.5A/

μs; V

IN

= V

IN, nom

; T

A

=25°C)

All V

pk

200

mV

Load Change from Io= 50% to 100% of Io,max;
1μF ceramic// 10 μF tantalum

Peak Deviation

Settling Time (Vo<10% peak deviation)

All t

s

25

μs

(dIo/dt=2.5A/

μs; V

IN

= V

IN, nom

; T

A

=25°C)

All V

pk

200

mV

Load Change from Io= 100% to 50%of Io,max:

1μF ceramic// 10 μF tantalum

Peak Deviation

Settling Time (Vo<10% peak deviation)

All t

s

25

μs

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