Diodes ZXT13N20DE6 User Manual
Diodes Hardware
ISSUE 1 - DECEMBER 1999
ZXT13N20DE6
SuperSOT4™
20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=20V; R
SAT
= 38m ; I
C
= 4.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• h
FE
characterised up to 15A
• I
C
=4.5A Continuous Collector Current
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT13N20DE6TA
7
8mm embossed
3000 units
ZXT13N20DE6TC
13
8mm embossed
10000 units
DEVICE MARKING
N20D
Top View
1
SOT23-6
C
E
B
C
C
C