Diodes ZXT13N20DE6 User Manual
Page 2
ISSUE 1 - DECEMBER 1999
ZXT13N20DE6
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θJA
113
°C/W
Junction to Ambient (b)
R
θJA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
7.5
V
Peak Pulse Current
I
CM
15
A
Continuous Collector Current
I
C
4.5
A
Base Current
I
B
500
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C