Diodes ZXT13N20DE6 - Manual (Page 4)

ISSUE 1 - DECEMBER 1999
ZXT13N20DE6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
50 100 V I
C
=100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
20 33 V I
C
=10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
7.5 8.5 V I
E
=100 ␮A
Collector Cut-Off Current I
CBO
100 nA V
CB
=40V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=6V
Collector Emitter Cut-Off Current I
CES
100 nA V
CES
=40V
Collector-Emitter Saturation
Voltage V
CE(sat)
5.0
55
170
8
75
230
mV
mV
mV I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=4.5A, I
B
=45mA*
Base-Emitter Saturation Voltage V
BE(sat)
0.9 1.0 V I
C
=4.5A, I
B
=45mA*
Base-Emitter Turn-On Voltage V
BE(on)
0.85 0.90 V I
C
=4.5A, V
CE
=2V*
Static Forward Current Transfer
Ratio h
FE
250
300
200
15
400
450
300
45
900
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=15A, V
CE
=2V*
Transition Frequency f
T
96 MHz I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance C
obo
50 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
115 ns V
CC
=10V, I
C
=2A
I
B1
=I
B2
=40mA
Turn-Off Time t
(off)
485 ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
4