Diodes DMN1033UCB4 - Manual

DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN1033UCB4
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V
SSS
R
SS(ON)
I
S
T
A
= +25°C
12V 26mΩ @ V
GS
= 4.5V 5.5 A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
SS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power
management applications.
Applications
 Battery Management
 Load Switch
 Battery Protection
Features and Benefits
 Built-in G-S protection diode against ESD 2kV HBM.

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
 Case: U-WLB1818-4
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Weight: 0.005 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN1033UCB4-7 U-WLB1818-4 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Equivalent Circuit
GW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
S1
G1
S2
G2
ESD PROTECTED TO 2kV