Diodes DMN1033UCB4 - Manual (Page 4)

DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN1033UCB4
NEW PROD
UC
T
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E (
V
)
GS
(t
h)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1
T = 25°C
A
1.2 1.4
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF)
T f = 1MHz
100
1000
10000
0 2 4 6 8 10 12
C
iss
C
oss
C
rss
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 10 Gate-Source Leakage Current vs. Voltage
I
,
LE
AKA
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
0.1
1
10
100
1000
10000
1 2 3 4 5 6
T = -55°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
Single Pulse
DUT on 1 * MRP Board
V
= 6V
J(max)
GS
A
0.01 0.1 1 10 100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 100 s
W
µ