Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN1033UCB4 User Manual

Page 2

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DMN1033UCB4

Document number: DS36264 Rev. 2 - 2

2 of 6

www.diodes.com

September 2013

© Diodes Incorporated

DMN1033UCB4

NEW PROD

UC

T



Maximum Ratings

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

SSS

12 V

Gate-Source Voltage

V

GSS

6

V

Continuous Source Current @
V

GS

= 4.5V T

A

= +25°C (Note 5)

Steady

State

T

A

= +25°C

T

A

= +70°C

I

S

5.5
4.5

A

Pulsed Source Current @ T

A

= +25°C (Notes 5 & 6)

I

SM

20 A



Thermal Characteristics

Characteristic Symbol

Value

Units

Power Dissipation, @T

A

= +25°C (Note 5)

P

D

1.45 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

JA

88.21 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)

Source to Source Breakdown Voltage T

J

= +25°C

V

(BR)SS

12 — — V

I

S

= 1mA, V

GS

=

V

Zero Gate Voltage Source Current T

J

= +25°C

I

SSS

1.0 µA

V

SS

= 12V, V

GS

= 0V

Gate-Body Leakage

I

GSS

10

µA

V

GS

=

6V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.35 0.5 0.7

V V

SS

= 10V, I

S

= 1.0mA

Static Source -Source On-Resistance

R

SS(ON)

19.5

20

20.5

21

21.5

22
26

35

26
27
28
29
30
31
33

50

mΩ

V

GS

= 4.5V, I

S

= 3.0A

V

GS

= 4.0V, I

S

= 3.0A

V

GS

= 3.7V, I

S

= 3.0A

V

GS

= 3.5V, I

S

= 3.0A

V

GS

= 3.1V, I

S

= 3.0A

V

GS

= 2.5V, I

S

= 3.0A

V

GS

= 1.8V, I

S

= 3.0A

V

GS

= 1.5V, I

S

= 3.0A

Forward Transfer Admittance

|Y

fs

|

11 — S

V

SS

= 10V, I

S

= 3.0A

Body Diode Forward Voltage

V

F(S-S)

0.7 1.0 V

I

F

= 3.0 A, V

GS

= 0 V,

DYNAMIC CHARACTERISTICS (Note 8)
Total Gate Charge

Q

g

37

nC

V

GS

= 4.5V, V

SS

= 10V, I

S

= 6A

Turn-On Delay Time

t

D(on)

10

ns

V

DD

= 6V,

R

L

= 6.0Ω, I

S

= 3.0A

Turn-On Rise Time

t

r

20

ns

Turn-Off Delay Time

t

D(off)

83

ns

Turn-Off Fall Time

t

f

52

ns

Notes:

5. Device mounted on FR4 material with 1-inch

2

(6.45-cm

2

), 2-oz. (0.071-mm thick) Cu.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.










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