Diodes DMN2005UFG - Manual (Page 3)

POWERDI is a registered trademark of Diodes Incorporated
.
DMN2005UFG
Document number: DS36943 Rev. 2 - 2
3 of 7
www.diodes.com
May 2014
© Diodes Incorporated
DMN2005UFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVANCED INFORMATION
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 10 µA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.4 0.7 1.2 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
— 4 4.6
mΩ
V
GS
= 4.5V, I
D
= 13.5A
3.9 8.7 V
GS
= 2.5V, I
D
= 13.5A
Diode Forward Voltage V
SD
— 0.8 1.1 V V
GS
= 0V, I
S
= 27A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 6495 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
— 546 — pF
Reverse Transfer Capacitance C
rss
— 477 — pF
Gate Resistance R
g
— 0.7 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 68.8 — nC
V
DS
= 16V, I
D
= 27A
Total Gate Charge (V
GS
= 10V) Q
g
— 164 — nC
Gate-Source Charge Q
gs
— 10.4 — nC
Gate-Drain Charge Q
gd
— 17.4 — nC
Turn-On Delay Time t
D(on)
— 12.4 — ns
V
GS
= 5V, V
DS
= 10V,
R
G
= 4.7Ω, I
D
= 13.5A
Turn-On Rise Time t
r
— 25.7 — ns
Turn-Off Delay Time t
D(off)
— 114 — ns
Turn-Off Fall Time t
f
— 38 — ns
Body Diode Reverse Recovery Time t
rr
— 16.1 — ns I
F
= 13.5A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
— 8.5 — nC I
F
= 13.5A, di/dt = 100A/μs
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A)
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V = 1.3V
GS
V = 1.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
V = 2.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A