Dmn2005ufg – Diodes DMN2005UFG User Manual
Page 5
POWERDI is a registered trademark of Diodes Incorporated
.
DMN2005UFG
Document number: DS36943 Rev. 2 - 2
5 of 7
May 2014
© Diodes Incorporated
DMN2005UFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVANCED INFORMATION
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T (
A
)
S
T = 85°C
A
0
5
10
15
20
25
0
0.3
0.6
0.9
1.2
T = 125°C
A
T = 150°C
A
T = -55°C
A
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
TI
O
N
C
AP
A
C
IT
AN
C
E (
p
F)
T
100
1000
10000
100000
0
2
4
6
8
10 12
14
16
18
20
f = 1MHz
C
iss
C
oss
C
rss
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E (
V
)
GS
0
2
4
6
8
10
0
20
40
60
80
100 120 140 160 180
V
= 16V
I =
A
DS
D
27
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
R
Limited
DS(ON)
0.01
0.1
1
10
100
0.01
0.1
1
10
100
T
= 150°C
T = 25°C
V
= 10V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r(
t)
, T
R
AN
S
IE
NT
T
H
E
R
M
AL
R
E
S
IS
TA
N
C
E
R
(t) = r(t) * R
R
= 132°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000