Samsung 1H 2011 - Manual (Page 20)

samsung.com/semi/sram 20 1H 2011 SRAM Ordering Information
1. Memory (K)
2. Sync SRAM: 7
3. Small Classification
A: sync Pipelined Burst
B: sync Burst
D: Double Data Rate
I: Double Data Rate II, Common I/o
J: Double Data Rate, separate I/o
K: Double Data II+, Common I/o
M: sync Burst + NtRAM
N: sync Pipelined Burst + NtRAM
P: sync Pipe
Q: Quad Data Rate I
R: Quad Data Rate II
s: Quad Data Rate II+
4~5. Density
80: 8M 16: 18M
40: 4M 32: 36M
64: 72M
6~7. Organization
08: x8 09: x9
18: x18 32: x32
36: x36
8~9. Vcc, Interface, Mode
00: 3.3V,LVttL,2e1D WIDe
01: 3.3V,LVttL,2e2D WIDe
08: 3.3V,LVttL,2e2D Hi sPeeD
09: 3.3V,LVttL,Hi sPeeD
11: 3.3V,HstL,R-R
12: 3.3V,HstL,R-L
14: 3.3V,HstL,R-R Fixed ZQ
22: 3.3V,LVttL,R-R
23: 3.3V,LVttL,R-L
25: 3.3V,LVttL,sB-Ft WIDe
30: 1.8/2.5/3.3V,LVttL,2e1D
31: 1.8/2.5/3.3V,LVttL,2e2D
35: 1.8/2.5/3.3V,LVttL,sB-Ft
44: 2.5V,LVttL,2e1D
45: 2.5V,LVttL,2e2D
49: 2.5V,LVttL,Hi sPeeD
52: 2.5V,1.5/1.8V,HstL,Burst2
54: 2.5V,1.5/1.8V,HstL,Burst4
62: 2.5V/1.8V,HstL,Burst2
64: 2.5V/1.8V,HstL,Burst4
66: 2.5V,HstL,R-R
74: 1.8V,2.5V,HstL,All
82: 1.8V,HstL,Burst2
84: 1.8V,HstL,Burst4
88: 1.8V,HstL,R-R
t2: 1.8V,2Clock Latency,Burst2
t4: 1.8V,2Clock Latency,Burst4
U2: 1.8V,2.5Clock Latency,Burst2
U4: 1.8V,2.5Clock Latency,Burst4
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
11. “--”
12. Package
H: BGA,FCBGA,PBGA
G: BGA, FCBGA, FBGA (LF)
F: FBGA
e: FBGA (LF)
Q: (L)QPF
P: (L)QFP(LF)
C: CHIP BIZ
W: WAFeR
13. Temp, Power
COMMON (Temp,Power)
0: NoNe,NoNe (Containing of error
handling code)
C: Commercial,Normal
e: extended,Normal
I: Industrial,Normal
WAFER, CHIP BIZ Level Division
0: NoNe,NoNe
1: Hot DC sort
2: Hot DC, selected AC sort
14~15. Speed
Sync Burst,Sync Burst + NtRAM
< Mode is R-L > (Clock Accesss time)
65: 6.5ns
70: 7ns
75: 7.5ns 80: 8ns
85: 8.5ns
Other Small Classification (Clock Cycle Time)
10: 100MHz
11: 117MHz
13: 133MHz 14: 138MHz
16: 166MHz 20: 200MHz
25: 250MHz
26: 250MHz(1.75ns)
27: 275MHz
30: 300MHz 33: 333MHz
35: 350MHz 37: 375MHz
40: 400MHz(t-CYCLe) 42: 425MHz
45: 450MHz
50: 500MHz (except sync Pipe)
16. Packing Type (16 digit)
- Common to all products, except of Mask RoM
- Divided into tAPe & ReeL (In Mask RoM,
divided into tRAY, AMMo packing separately)
Type Packing Type New Marking
Component tAPe & ReeL t
other (tray, tube, Jar) 0 (Number)
stack s
Component tRAY Y
(Mask RoM) AMMo PACKING A
Module MoDULe tAPe & ReeL P
MoDULe other Packing M
SYncHronouS SrAM orderinG inForMAtion
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
K 7 X X X X X X X X - X X X X X
SAMSUNG Memory
Sync SRAM
Small Classification
Density
Density
Organization
Organization
Vcc, Interface, Mode Packaging Type
Speed
Speed
Temp, Power
Package
---
Generation
Vcc, Interface, Mode