Samsung 1H 2011 - Manual (Page 8)

samsung.com/semi/dram 8 1H 2011 DDR2, DDR & SDRAM Components
SdrAM coMPonentS
Density Organization Part Number # Pins - Package Speed (Mbps) Refresh
256Mb
64Mx4 K4s560432N-LC(L)75000 54-tsoP 133 8K
32Mx8 K4s560832N-LC(L)75000 54-tsoP 133 8K
16Mx16 K4s561632N-LC(L)(75/60)000 54-tsoP 133/166 8K
128Mb
16Mx8 K4s280832o-LC(L)75000 54-tsoP 133 4K
8Mx16 K4s281632o-LC(L)(75/60)000 54-tsoP 133/166 4K
Notes: L = Commercial temp., Low Power
For Industrial temperature, check with ssI Marketing
Banks: 4
All products are Lead Free
Voltage: 3.3V
speed: PC133 (133MHz CL=3/PC100 CL2)
ddr SdrAM coMPonentS
Density Organization Part Number # Pins - Package Speed (Mbps)
512Mb
128Mx4
K4H510438J-LCB3/B0 66-tsoP 266/333
K4H510438J-HCCC/B3 60-FBGA 333/400
64Mx8
K4H510838J-LCCC/B3 66-tsoP 333/400
K4H510838J-HCCC/B3 60-FBGA 333/400
32Mx16 K4H511638J-LCCC/B3 66-tsoP 333/400
256Mb
64Mx4 K4H560438N-LCB3/B0 66-tsoP 266/333
32Mx8 K4H560838N-LCCC/B3 66-tsoP 333/400
16Mx16 K4H561638N-LCCC/B3 66-tsoP 333/400
128Mb 8Mx16 K4H281638o-LCCC 66-tsoP 400
Notes: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
ddr2 SdrAM unBuFFered ModuleS (ecc)
Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production
1GB 128Mx72 M391t2863FB3-C(e6/F7) (128Mx8)*9 Lead free 667/800 1 Now
2GB 256Mx64 M391t5663FB3-C(e6/F7) (128Mx8)*18 Lead free 667/800 2 Now
Notes: e6 = PC2-5300 (DDR2-667 @ CL=5)
e7 = PC2-6400 (DDR2-800 @ CL=5)
F7 = PC2-6400 (DDR2-800 @ CL=6)
Voltage = 1.8V
ddr2 SdrAM SodiMM ModuleS
Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production
1GB 128Mx64 M470t2863FB3-C(e6/F7/e7) (64Mx16)*8 Lead free 667/800 2 Now
2GB 256Mx64 M470t5663FB3-C(e6/F7/e7) (128M x8)*8 Lead free 667/800 2 Now
Notes: e6 = PC2-5300 (DDR2-667 @ CL=5)
e7 = PC2-6400 (DDR2-800 @ CL=5)
F7 = PC2-6400 (DDR2-800 @ CL=6)
Voltage = 1.8V
ddr2 SdrAM coMPonentS
Density Organization Part Number # Pins-Package Dimensions Package Speed (Mbps) Production
256Mb 16Mx16 K4t56163QN-HC(e6/F7/e7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Now
512Mb
128M x4 K4t51043QI-HC(e6/F7/e7) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800 Now
64M x8 K4t51083QI-HC(e6/F7/e7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800/1066 Now
32M x16 K4t51163QI-HC(e6/F7/e7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Now
128M x4 K4t51043QJ-HC(e6/F7/e7) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800 Q3
64M x8 K4t51083QJ-HC(e6/F7/e7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800/1066 Q3
32M x16 K4t51163QJ-HC(e6/F7/e7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Q3
1Gb
256M x4 K4t1G044QF-BC(e6/F7/e7) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800 Now
128M x8 K4t1G084QF-BC(e6/F7/e7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free 667/800/1066 Now
64M x16 K4t1G164QF-BC(e6/F7/e7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free 667/800/1066 Now
Notes: e6 = DDR2-667 (5-5-5)
F7 = DDR2-800 (6-6-6)
e7 = DDR2-800 (5-5-5)
F8 = DDR2-1066 (7-7-7)
Voltage = 1.8V
Package Type
H = FBGA (Lead-free & Halogen-free)
B = FBGA (Lead-free & Halogen-free, Flip Chip)
ddr2 SdrAM unBuFFered ModuleS
Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production
1GB 128Mx64 M378t2863FBs-C(e6/F7/e7) (128M x8)*8 Lead free 667/800 1 Now
2GB 256Mx64 M378t5663FB3-C(e6/F7/e7) (128M x8)*16 Lead free 667/800 2 Now
Notes: e6 = PC2-5300 (DDR2-667 @ CL=5) e7 = PC2-6400 (DDR2-800 @ CL=5) F7 = PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.8V