Static characteristics, Dynamic characteristics, Sa5211 – Philips SA5211 User Manual

Page 3: Philips semiconductors

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Philips Semiconductors

SA5211

Transimpedance amplifier (180 MHz)

Product specification

Rev. 03 — 07 October 1998

3 of 28

9397 750 07427

© Philips Electronics N.V. 2001. All rights reserved.

7.

Static characteristics

[1]

Test condition: output quiescent voltage variation is less than 100 mV for 3 mA load current.

8.

Dynamic characteristics

Table 3:

Recommended operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

V

CC

supply voltage

4.5

5.5

V

T

amb

ambient temperature range

-40

+85

°

C

T

J

junction temperature range

-40

+105

°

C

Table 4:

DC electrical characteristics

Min and Max limits apply over operating temperature range at V

CC

= 5 V, unless otherwise specified. Typical data apply at

V

CC

= 5 V and T

amb

= 25

°

C.

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

V

IN

input bias voltage

0.55

0.8

1.00

V

V

O

±

output bias voltage

2.7

3.4

3.7

V

V

OS

output offset voltage

0

130

mV

I

CC

supply current

20

26

31

mA

I

OMAX

output sink/source current

[1]

3

4

mA

I

IN

input current
(2% linearity)

Test Circuit 8,
Procedure 2

±

20

±

40

µ

A

I

IN MAX

maximum input current
overload threshold

Test Circuit 8,
Procedure 4

±

30

±

60

µ

A

Table 5:

AC electrical characteristics

Typical data and Min and Max limits apply at V

CC

= 5 V and T

amb

= 25

°

C

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

R

T

transresistance (differential output)

DC tested RL =

Test Circuit 8, Procedure 1

21

28

36

k

R

O

output resistance (differential output)

DC tested

30

R

T

transresistance (single-ended output)

DC tested
RL =

10.5

14

18.0

k

R

O

output resistance (single-ended output)

DC tested

15

f

3dB

bandwidth (-3dB)

T

A

= 25

°

C

Test circuit 1

180

MHz

R

IN

input resistance

200

C

IN

input capacitance

4

pF

R/

V

transresistance power supply sensitivity

V

CC

= 5

±

0.5 V

3.7

%/V

R/

T

transresistance ambient temperature sensitivity

T

amb

= T

amb MAX

-T

amb MIN

0.025

%/

°

C

I

N

RMS noise current spectral density (referred to
input)

Test Circuit 2
f = 10 MHz
TA = 25

°

C

1.8

pA/

Hz

I

T

integrated RMS noise current over the
bandwidth (referred to input)

TA = 25

°

C

Test Circuit 2

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