Philips BGD885 - Manual (Page 2)

2001 Nov 02 2
NXP Semiconductors Product specification
860 MHz, 17 dB gain power doubler
amplifier
BGD885
FEATURES
 Excellent linearity
 Extremely low noise
 Silicon nitride passivation
 Rugged construction
 Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
PINNING - SOT115D
PIN DESCRIPTION
1 input
2, 3, 5, 6, 7 common
4 10 V, 200 mA supply terminal
8 +V
B
9 output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2 4 6
3 5 1
Side view MBK049
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 16.5 17.5 dB
I
tot
total current consumption (DC) V
B
= 24 V

450 mA
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
DC supply voltage

26 V
V
i
RF input voltage

65 dBmV
T
stg
storage temperature
40
+100
C
T
mb
operating mounting base temperature
20
+100
C