Philips BGD885 User Manual
Page 4
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2001 Nov 02
4
NXP Semiconductors
Product specification
860 MHz, 17 dB gain power doubler
amplifier
BGD885
Fig.2 Test circuit.
1
2
3
4
5
6
7
8
9
BGD885
input
C2
output
VB = 24 V
MEA094-2
10 V
C1
List of components (see Fig.2)
COMPONENT
DESCRIPTION
VALUE
C1
ceramic multilayer capacitor
1 nF (max.)
C2
ceramic multilayer capacitor
1 nF
R
resistor
56
2 W
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