Panasonic MA21D382G - Manual

Schottky Barrier Diodes (SBD)
Publication date: January 2008 SKH00223AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA21D382G
Silicon epitaxial planar type
For high frequency rectification
 Features
 I
F(AV)
= 1.5 A rectification is possible
 Low forward voltage V
F
 Large non-repetitive peak forward surge current I
FSM
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Maximum peak reverse voltage V
RM
30 V
Forward current (Average) I
F(AV)
1.5 A
Non-repetitive peak forward surge
current
*
I
FSM
30 A
Junction temperature T
j
150 ° C
Storage time T
stg
–55 to +150 ° C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 0.5 A 0.34 0.38 V
V
F2
I
F
= 1.0 A 0.38 0.42
V
F3
I
F
= 1.5 A 0.42 0.46
Reverse current I
R
V
R
= 30 V 100 m A
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz 40 pF
Reverse recovery time * t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100 W
13 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p = 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= I
R
= 100 mA
R
L
= 100 Ω
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
 Package
 Code
SMini2-F2

Pin Name
1: Anode
2: Cathode
 Marking Symbol: 4U