Panasonic UP0KG8DG User Manual

Up0kg8dg, Multi chip discrete

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Multi Chip Discrete

Publication date: October 2007

SJJ00402AED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

UP0KG8DG

Silicon epitaxial planar type (SBD)

Silicon PNP epitaxial planar type (Tr)

For digital circuits

Features

Two elements incorporated into one package (SBD + Tr)

Costs can be reduced through downsizing of the equipment and reduction of

the number of parts

Basic Part Number

MA2SD240G + UNR31A3G

Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

SBD

Reverse voltage

V

R

20

V

Repetitive peak reverse voltage

V

RRM

20

V

Forward current (Average)

I

F(AV)

200

mA

Peak forward current

I

FM

300

mA

Non-repetitive peak forward
surge current

I

FSM

1

A

Tr

Collector-base voltage
(Emitter open)

V

CBO

-

50

V

Collector-emitter voltage
(Base open)

V

CEO

-

50

V

Collector current

I

C

-

80

mA

Overall

Total power dissipation

P

T

125

mW

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

–55 to +125

°

C

Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Package

Code

SSMini5-F3

Pin Name

1: Anode

4: Collector

2: Base

5: Cathode

3: Emitter

Marking Symbol: 6K

Internal Connection

3

4

1

2

5

Tr

SBD

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