Panasonic UP0KG8D - Manual

Multi Chip Discrete
Publication date: November 2005 SJJ00334AED 1
UP0KG8D
Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)
For digital circuits
 Features
 Two elements incorporated into one package (SBD + Tr)
 Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
 Basic Part Number
 MA2SD24 + UNR31A3
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
SBD
Reverse voltage V
R
20 V
Repetitive peak reverse voltage V
RRM
20 V
Forward current (Average) I
F(AV)
200 mA
Peak forward current I
FM
300 mA
Non-repetitive peak forward
surge current
I
FSM
1 A
Tr
Collector-base voltage
(Emitter open)
V
CBO
- 50 V
Collector-emitter voltage
(Base open)
V
CEO
- 50 V
Collector current I
C
- 80 mA
Overall
Total power dissipation P
T
125 mW
Junction temperature T
j
125 ° C
Storage temperature T
stg
–55 to +125 ° C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Marking Symbol: 6K
Internal Connection
Unit: mm
1: Anode 4: Collector
2: Base 5: Cathode
3: Emitter SSMini5-F2 Package
–0.02
+0.05
0.20 (0.30)
(0.50)
1 2 3
5 4
(0.50)
1.60
±0.05
0.55
±0.05
0 to 0.02
0.10 max
1.20
±0.05
1.00 ± 0.05
1.60 ± 0.05
0.10 ± 0.02
(0.20)
(0.20)
5°
5°
Display at No.1 lead
3
4
1 2
5
Tr
SBD