Philips BGA2003 - Manual (Page 2)

2010 Sep 13 2
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2003
FEATURES
• Low current
• Very high power gain
• Low noise figure
• Integrated temperature compensated biasing
• Control pin for adjustment bias current
• Supply and RF output pin combined.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Low noise amplifiers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
PINNING
PIN DESCRIPTION
1 GND
2 RF in
3 CTRL (bias current control)
4 V
S
+ RF out
handbook, halfpage
Top view MAM427
2 1
4 3
BIAS
CIRCUIT
CTRL
RFin GND
V
S+RFout
Marking code: A3*
Fig.1 Simplified outline (SOT343R) and symbol.
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
DC supply voltage RF input AC coupled
−
4.5 V
I
S
DC supply current V
VS-OUT
= 2.5 V; I
CTRL
= 1 mA;
RF input AC coupled
11
−
mA
MSG maximum stable gain V
VS-OUT
= 2.5 V; f = 1800 MHz;
T
amb
= 25
°C
16
−
dB
NF noise figure V
VS-OUT
= 2.5 V; f = 1800 MHz;
Γ
S
=
Γ
opt
1.8
−
dB