Static characteristics, Dynamic characteristics, Cbt3126 – NXP Semiconductors CBT3126 User Manual

Page 4: Nxp semiconductors

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CBT3126_4

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 04 — 12 October 2009

4 of 13

NXP Semiconductors

CBT3126

Quad FET bus switch

9.

Static characteristics

[1]

All typical values are measured at V

CC

= 5 V; T

amb

= 25

°

C.

[2]

This is the increase in supply current for each input that is at the specified TTL voltage level rather than V

CC

or GND.

[3]

Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. ON resistance is
determined by the lowest voltage of the two (A or B) terminals.

10. Dynamic characteristics

[1]

This parameter is warranted but not production tested. The propagation delay is based on the RC time constant of the typical ON
resistance of the switch and a load capacitance, when driven by an ideal voltage source (zero output impedance).

[2]

t

PLH

and t

PHL

are the same as t

pd

;

t

PZL

and t

PZH

are the same as t

en

;

t

PLZ

and t

PHZ

are the same as t

dis

.

Table 6.

Static characteristics

T

amb

=

40

°

C to +85

°

C.

Symbol

Parameter

Conditions

Min

Typ

[1]

Max

Unit

V

IK

input clamping voltage

V

CC

= 4.5 V; I

I

=

18 mA

-

-

1.2

V

V

pass

pass voltage

V

I

= V

CC

= 5.0 V; I

SW

=

100

µ

A

-

3.8

-

V

I

I

input leakage current

V

CC

= 5.5 V; V

I

= GND or 5.5 V

-

-

±

1

µ

A

I

CC

supply current

V

CC

= 5.5 V; I

SW

= 0 mA;

V

I

= V

CC

or GND

-

-

3

µ

A

I

CC

additional supply current

control pins; per input;
V

CC

= 5.5 V; one input at 3.4 V,

other inputs at V

CC

or GND

[2]

-

-

2.5

mA

C

I

input capacitance

control pins; V

I

= 3 V or 0 V

-

1.7

-

pF

C

io(off)

off-state input/output capacitance

V

O

= 3 V or 0 V; nOE = V

CC

-

3.4

-

pF

R

ON

ON resistance

V

CC

= 4.0 V

[3]

V

I

= 2.4 V; I

I

= 15 mA

-

16

22

V

CC

= 4.5 V

V

I

= 0 V; I

I

= 64 mA

-

5

7

V

I

= 0 V; I

I

= 30 mA

-

5

7

V

I

= 2.4 V; I

I

= 15 mA

-

10

15

Table 7.

Dynamic characteristics

T

amb

=

40

°

C to +85

°

C; V

CC

= 4.5 V to 5.5 V; for test circuit see

Figure 8

.

Symbol

Parameter

Conditions

Min

Max

Unit

t

pd

propagation delay

nA to nB or nB to nA; see

Figure 6

[1][2]

-

0.25

ns

t

en

enable time

nOE to nA or nB; see

Figure 7

[2]

1.6

4.5

ns

t

dis

disable time

nOE to nA or nB; see

Figure 7

[2]

1.0

5.4

ns

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