Renesas SH7641 - Manual (Page 992)

Section 25 Electrical Characteristics
Rev. 4.00 Sep. 14, 2005 Page 942 of 982
REJ09B0023-0400
Tc2 Tc3 Tc4 Trwl Tr Tc1 Trw
t
AD1
t
CSD1
t
AD1
t
AD1
t
AD1
t
AD1
t
AD1
t
RWD1
t
RWD1 t
RWD1
t
CSD1
t
AD1
t
AD1
t
AD1
t
AD1
CKIO
A25 to A0
CSn
RD/ WR
A12/A11* 1
D31 to D0
t
RASD1
t
RASD1
RASU/L
Row
address
WriteA
command
WRIT command
Column
address
t
CASD1
t
CASD1
CASU/L
t
BSD
t
BSD
(High)
BS
CKE
t
DQMD1
t
DQMD1
DQMxx
t
DACD
t
DACD
DACKn* 2
t
WDH2
t
WDD2
t
WDH2
t
WDD2
Note: 1. An address pin to be connected to pin A10 of SDRAM.
2. Waveform for DACKn when active low is selected.
Figure 25.30 Synchronous DRAM Burst Write Bus Cycle
(Four Write Cycles) (Auto Precharge, WTRCD = 1 Cycle, TRWL = 1 Cycle)