Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB100TH120N User Manual
Page 4
VS-GB100TH120N
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Vishay Semiconductors
Revision: 26-Mar-13
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Document Number: 94752
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature
T
J
-
-
150
°C
Storage temperature range
T
STG
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
0.150
K/W
Diode
-
-
0.225
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M6
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
300
g
V
CE
(V)
I
C
(A)
0
40
20
60
80
120
100
140
180
160
200
0
1
1.5
0.5
2
2.5
3.5
3
125 °C
V
GE
= 15 V
25 °C
V
GE
(V)
I
C
(A)
0
50
25
75
100
150
125
200
175
5
7
9
6
8
10
11
12
13
V
CE
= 20 V
25 °C
125 °C
0
5
10
15
20
25
30
0
50
100
150
200
I
C
(A)
E
ON
, E
OFF
(mJ)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 5.6
Ω
V
CC
= 600 V
E
off
E
on
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
R
g
(
Ω)
E
ON
, E
OFF
(mJ)
E
off
E
on
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 100 A
V
CC
= 600 V