Vishay semiconductors – C&H Technology VS-GB100TH120N User Manual
Page 5
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VS-GB100TH120N
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-13
4
Document Number: 94752
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. I
F
0
300
900
600
1200
1500
200
220
180
160
140
120
100
80
60
40
20
0
V
CE
(V)
I
C
(A)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 5.6
Ω
I
C
, Module
Z
thJC
(K/W)
t (s)
10
0
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
IGBT
0
0.5
1
1.5
2
2.5
3
V
F
(V)
I
F
(A)
25 °C
125 °C
0
50
25
75
100
150
125
200
175
I
F
(A)
E (mJ)
0
50
100
150
200
10
9
8
7
6
5
4
3
2
1
0
V
GE
= - 15 V
T
J
=
125 °C
R
g
= 5.6
Ω
V
CC
= 600 V
E
rec
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