Vishay semiconductors, Circuit configuration – C&H Technology VS-GB100TH120N User Manual
Page 6
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VS-GB100TH120N
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-13
5
Document Number: 94752
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. R
g
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
R
g
(
Ω)
E (mJ)
0
0
1
2
3
4
5
7
8
6
10
30
20
40
50
60
V
GE
= - 15 V
T
J
=
125 °C
I
C
= 100 A
V
CC
= 600 V
E
REC
Z
thJC
(K/W)
t (s)
10
0
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
DIODE
1
6
7
3
2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
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