Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GT400TH60N User Manual
Page 4
VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
Revision: 06-Aug-12
3
Document Number: 93488
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 1 - IGBT Typical Output Characteristics
V
GE
= 15 V
Fig. 2 - IGBT Typical Transfer Characteristics
V
CE
= 20 V
Fig. 3 - IGBT Switching Loss vs. Collector Current
V
CC
= 600 V, R
g
= 1.3
, V
GE
= ± 15 V, T
J
= 175 °C
Fig. 4 - Switching Loss vs. Gate Resistor
V
CE
= 600 V, I
C
= 400 A, V
GE
= ± 15 V, T
J
= 175 °C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
-
-
175
°C
Storage temperature range
T
Stg
- 40
-
125
Junction to case
per ½ module
IGBT
R
thJC
-
-
0.094
K/W
Diode
-
-
0.158
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M6
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
300
g
I
C
(A)
V
CE
(V)
0
0.5
1.5
1.0
2.0
2.5
4.0
3.0
3.5
0
93488_01
800
400
200
100
300
500
700
600
175 °C
25 °C
I
C
(A)
V
GE
(V)
3
8
9
4
5
6
7
10
93488_02
800
400
100
0
200
600
500
300
700
T
J
= 175 °C
T
J
= 25 °C
E
on
, E
off
(mJ)
I
C
(A)
0
800
600
400
200
0
20
10
30
50
40
60
93488_03
70
E
off
E
on
E
on
, E
off
(mJ)
R
g
(
Ω)
0
20
5
10
15
0
10
20
30
50
60
40
93488_04
100
70
80
90
E
on
E
off