C&H Technology VS-GT400TH60N - Manual (Page 5)

VS-GT400TH60N
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Vishay Semiconductors
Revision: 06-Aug-12 4 Document Number: 93488
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Fig. 5 - RBSOA
R
g
= 1.3
, V
GE
= ± 15 V, T
J
= 175 °C
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Forward Characteristics of Diode Fig. 8 - Diode Switching Loss vs. I
F
V
CC
= 600 V, R
g
= 1.3 , V
GE
= - 15 V, T
J
= 125 °C
I C
(A)
V
CE
(V)
0 100 300 200 400 500 700 600
0
93488_05
900
800
400
200
100
300
500
700
600
I
C
, module
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
t (s)
Z
thJC
(K/W)
93488_06
IGBT
I C
(A)
V
F
(V)
0 2.0 1.5 0.5 1.0
0
93488_07
800
400
300
200
100
700
600
500
150 °C
25 °C
E (mJ)
I
F
(A)
0 200 400 600 800
0
93488_08
12
8
4
2
6
10
E
rec