Vishay semiconductors, Circuit configuration – C&H Technology VS-GT400TH60N User Manual
Page 6
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VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
Revision: 06-Aug-12
5
Document Number: 93488
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. Gate Resistance
V
CC
= 600 V, I
C
= 400 A, V
GE
= - 15 V, T
J
= 125 °C
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
E (mJ)
R
g
(
Ω)
0
2
4
8
6
10
12
0
93488_09
8
4
2
1
3
6
5
7
E
rec
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
t (s)
Z
thJC
(K/W)
93488_10
Diode
1
6
7
3
2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
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