Diodes SBRT3M40P1 - Manual (Page 2)

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SBRT3M40P1
Document number: DS36267 Rev. 4 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
SBRT3M40P1
NEW PROD
UC
T
ADVANCED INFORMATION ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
40 V
Average Rectified Output Current I
O
3 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
70 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) R
θJA
78 °C/W
Typical Thermal Resistance Junction to Case (Note 5) R
θJC
16 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop (Note 6) V
F
—
—
—
— 0.37
0.29
0.46
0.41 0.42
—
0.53
—
V
I
F
= 1A, T
J
= +25°C
I
F
= 1A, T
J
= +125°C
I
F
= 3A, T
J
= +25°C
I
F
= 3A, T
J
= +125°C
Leakage Current (Note 6) I
R
—
— 8
2.2
30
15 μA
mA
V
R
= 40V, T
J
= +25°C
V
R
= 40V, T
J
= +125°C
Notes: 5. Device mounted on 1 inch FR4.
6. Short duration pulse test used to minimize self-heating effect.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 0.5 1 1.5 2 2.5 3 3.5
I AVERAGE FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
F(AV)
P
, A
V
E
R
A
G
E
F
O
R
WA
R
D
POW
E
R
DIS
S
IP
A
T
ION
(W
)
D
0.0001
0.001
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I
, I
N
ST
ANT
A
NE
O
U
S FORW
ARD
CURRENT
(
A
)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A