Diodes SBRT3M40P1 User Manual
Page 3
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBRT3M40P1
Document number: DS36267 Rev. 4 - 2
3 of 5
November 2013
© Diodes Incorporated
SBRT3M40P1
NEW PROD
UC
T
ADVANCED INFORMATION ADVAN
CE I
N
F
O
RM
ATI
O
N
0.01
0.1
1
10
100
1000
10000
100000
0
10
20
30
40
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(µ
A
)
R
Figure 3 Typical Reverse Characteristics
V , REVERSE VOLTAGE (V)
R
T = -55°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = 25°C
A
10
100
1000
10000
0
10
20
30
40
f=1MHz
Figure 4 Typical Junction Capacitance
V , REVERSE VOLTAGE (V)
R
C
, J
UNCT
IO
N CAP
A
CI
TA
NCE (
pF
)
T
0
1
2
3
4
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 5 Forward Current Derating Curve
I,
A
V
E
R
A
G
E F
O
R
WA
R
D
C
U
R
R
E
N
T (
A
)
F(
A
V
)
Note 5
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Figure 6 Transient Thermal Resistance
r(
t)
, TRANS
IENT THERM
A
L RESI
ST
AN
CE
R
(t) = r(t) * R
R
= 131°C/W
Duty Cycle, D = t1/ t2
JA
JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse