Diodes ZXT11N20DF - Manual

ISSUE 1 - DECEMBER 1999
ZXT11N20DF
SuperSOT4™
20V NPN SILICON LOW SATURATION TRANSISTOR
C
E
B
SUMMARY
V
CEO
=20V; R
SAT
= 40m ; I
C
= 2.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• h
FE
characterised up to 5A
• I
C
=2.5A Continuous Collector Current
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH
(mm) QUANTITY
PER REEL
ZXT11N20DFTA 7 8mm embossed 3000 units
ZXT11N20DFTC 13 8mm embossed 10000 units
DEVICE MARKING
2N0
Top View
SOT23
1