Diodes ZXT11N20DF - Manual (Page 2)

ISSUE 1 - DECEMBER 1999
ZXT11N20DF
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R θJA 200 °C/W
Junction to Ambient (b) R θJA 155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
7.5 V
Peak Pulse Current I
CM
5 A
Continuous Collector Current I
C
2.5 A
Base Current I
B
500 mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
625
5
mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C