Maximum ratings – q1 (npn transistor), Maximum ratings – q2 (pnp transistor), Thermal characteristics – Diodes ZXTC2062E6 User Manual

Page 2

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ZXTC2062E6

Document Number: DS33647 Rev: 2 - 2

2 of 9

www.diodes.com

February 2013

© Diodes Incorporated

ZXTC2062E6

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Maximum Ratings – Q1 (NPN Transistor)

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Collector-Base Voltage

V

CBO

100 V

Collector-Emitter Voltage

V

CEO

20 V

Emitter-Collector Voltage (reverse blocking)

V

ECO

5 V

Emitter-Base Voltage

V

EBO

7 V

Continuous Collector Current

I

C

4 A

Peak Pulsed Collector Current

I

CM

10 A

Base Current

I

B

1 A



Maximum Ratings – Q2 (PNP Transistor)

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-25 V

Collector-Emitter Voltage

V

CEO

-20 V

Emitter-Collector Voltage (reverse blocking)

V

ECO

-4 V

Emitter-Base Voltage

V

EBO

-7 V

Continuous Collector Current

I

C

-3.5 A

Peak Pulsed Collector Current

I

CM

-10 A

Base Current

I

B

-1 A



Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Power Dissipation
Linear Derating Factor

(Notes 5 & 9)

P

D

0.7
5.6

W

mW/

°C

(Notes 6 & 9)

0.9
7.2

(Notes 6 & 10)

1.1
8.8

(Notes 7 & 9)

1.1
8.8

(Notes 8 & 9)

1.7

13.6

Thermal Resistance, Junction to Ambient

(Notes 5 & 9)

R

θJA

179

°C/W

(Notes 6 & 9)

139

(Notes 6 & 10)

113

(Notes 7 & 9)

113

(Notes 8 & 9)

73

Thermal Resistance, Junction to Lead

(Note 11)

R

θJL

87.58

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes:

5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as note (5), except the device is surface mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is surface mounted on 50mm x 50mm 2oz copper.
8. Same as note (7), except the device is measured at t < 5 seconds.
9. For device with one active die, both collectors attached to a common heatsink.
10. For device with two active dice running at equal power, split heatsink 50% to each collector.
11. Thermal resistance from junction to solder-point (at the end of the collector lead).





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