Diodes ZXTC2062E6 User Manual
Page 7
ZXTC2062E6
Document Number: DS33647 Rev: 2 - 2
7 of 9
February 2013
© Diodes Incorporated
ZXTC2062E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Typical Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
1m
10m
100m
1
10
1m
10m
100m
1
1m
10m
100m
1
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1m
10m
100m
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1m
10m
100m
1
10
0.4
0.6
0.8
1.0
1.2
1m
10m
100m
1
10
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
I
C
/I
B
=100
V
CE(SAT)
v I
C
Tamb=25°C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
- V
CE
(S
A
T
)
(
V
)
- I
C
Collector Current (A)
100°C
V
BE(SAT)
v I
C
I
C
/I
B
=10
150°C
25°C
-55°C
- V
CE
(S
A
T
)
(
V
)
- I
C
Collector Current (A)
150°C
h
FE
v I
C
V
CE
=2V
-55°C
25°C
100°C
No
rm
al
is
ed
Gain
- I
C
Collector Current (A)
150°C
25°C
V
CE(SAT)
v I
C
I
C
/I
B
=10
100°C
-55°C
- V
BE(
SA
T
)
(
V
)
- I
C
Collector Current (A)
150°C
V
BE(ON)
v I
C
V
CE
=2V
100°C
25°C
-55°C
- V
BE(
O
N
)
(V
)
- I
C
Collector Current (A)
Ty
pic
al G
ain
(
h
FE
)